Plastic Infrared Emitting Diode
OP265, OP266 Series
(A, B, C, D, W)
Features:
?? T-1 (3 mm) package style
?? Choice of narrow or wide irradiance pattern
?? Choice of dome or flat lens
?? Mechanically and spectrally matched to other OPTEK devices
?? Higher power output than GaAs at equivalent drive currents
?? 890 nm diodes
Description:
Each device in the OP265 and OP266 series is a high intensity gallium arsenide infrared emitting diode (GaAIAs)
that is molded in an IR transmissive clear epoxy package with either a dome or flat lens. Devices feature narrow
and wide irradiance patterns and a variety of electrical characteristics. The small T-1 package style makes these
devices ideal for space-limited applications.
OP265 devices conform to the OP505 and OP535 series devices. OP266 devices conform to OP506 series
devices.
Please refer to Application Bulletins 208 and 210 for additional design information and reliability (degradation) data.
Applications:
?? Space-limited applications
?? Applications requiring coupling
efficiency
?? Battery-operated or voltage-limited
applications
Part
Number
OP265A
OP265B
OP265C
LED Peak
Wavelength
Ordering Information
Output Power (mW/ I F (mA)
cm 2 ) Min / Max Typ / Max
2.70 / NA
1.65 / 4.70
0.54 / 3.30
Total Beam
Angle
18°
Lead
Length
OP265D
0.54 / NA
OP265W
OP266A
890 nm
1.00 / NA
2.70 / NA
20 / 50
90°
See
page 2
OP266B
OP266C
OP266D
OP266W
1.65 / 4.70
0.54 / 3.30
0.54 / NA
1.00 / NA
18°
90°
RoHS
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue D 02/2014
Page 1 of 4
相关PDF资料
OP268FPS DIODE INFRARED EMITTING PLASTIC
OP293B LED IR 890NM PLASTIC WIDE TO-46
OP301SL PHOTOTRNS SILICN NPN HERMET PILL
OP501DA PHOTODARLINGTON NPN BLK 0805 SMD
OP505C PHOTOTRANSISTOR SILICON NPN T-1
OP505W PHOTOTRANSMITTER SILICON NPN T-1
OP506D PHOTOTRANSMITTER SILICON NPN T-1
OP506W PHOTOTRANSMITTER SILICON NPN T-1
相关代理商/技术参数
OP268FA 功能描述:红外发射源 Infrared 890nm RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk
OP268FB 功能描述:红外发射源 Infrared 890nm RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk
OP268FC 功能描述:红外发射源 Infrared 890nm RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk
OP268FPS 功能描述:红外发射源 Point Source 850nm RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk
OP269 制造商:OPTEK 制造商全称:OPTEK 功能描述:GAALAS PLASTIC INFRARED EMITTING DIODES
OP269-003 制造商:TT Electronics / OPTEK Technology 功能描述:
OP269A 功能描述:红外发射源 Infrared 890nm RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk
OP269B 功能描述:红外发射源 Infrared 890nm RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk